參數(shù)資料
型號(hào)： 2SK3373
廠商： Toshiba Corporation
元件分類： DC/DC變換器
英文描述： Switching Regulator and DC-DC Converter Applications Motor Drive Applications
中文描述： 開關(guān)穩(wěn)壓器和DC - DC轉(zhuǎn)換器應(yīng)用電機(jī)驅(qū)動(dòng)應(yīng)用
文件頁數(shù)： 1/7頁
文件大?。?/td> 229K
代理商： 2SK3373
2SK3373
2002-09-02
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
V
)
2SK3373
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 2.9 m
(typ.)
High forward transfer admittance: |Y
fs
| =
1
.7 S (typ.)
Low leakage current: I
DSS
=
1
00 μA (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
500
V
Drain-gate voltage (R
GS
20 k )
V
DGR
500
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
2
Pulse (t 1 ms)
(Note 1)
I
DP
5
Drain current
Pulse (t 100 s)
(Note 1)
I
DP
12
A
Drain power dissipation (Tc 25°C)
P
D
20
W
Single pulse avalanche energy
(Note 2)
E
AS
112
mJ
Avalanche current
I
AR
2
A
Repetitive avalanche energy (Note 3)
E
AR
2
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
125
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
90 V, T
ch
25°C (initial), L 48.4 mH, R
G
25 , I
AR
2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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