
CHAPTER 1 OUTLINE
User’s Manual U17260EJ6V0UD
29
1.7 Outline of Functions
(1/2)
Item
PD78F0531 PD78F0532 PD78F0533 PD78F0534 PD78F0535 PD78F0536 PD78F0537 PD78F0537D
Flash memory
(self-programming
supported)
Note 1
16 KB
24 KB
32 KB
48 KB
60 KB
96 KB
128 KB
Memory bank
Note 2
4 banks
6 banks
High-speed RAM
Note 1
768 bytes
1 KB
Internal
memory
Expansion RAM
Note 1
1 KB
2 KB
4 KB
6 KB
Memory space
64 KB
High-speed system
X1 (crystal/ceramic) oscillation, external main system clock input (EXCLK)
Standard
products, (A)
grade products
1 to 20 MHz: VDD = 4.0 to 5.5 V, 1 to 10 MHz: VDD = 2.7 to 5.5 V,
1 to 5 MHz: VDD = 1.8 to 5.5 V
clock
(A2) grade
products
1 to 20 MHz: VDD = 4.0 to 5.5 V, 1 to 10 MHz: VDD = 2.7 to 5.5 V
Internal high-speed
oscillation clock
Internal oscillation
Standard
products, (A)
grade products
8 MHz (TYP.): VDD = 1.8 to 5.5 V
Main
system
clock
(oscillation
frequency)
(A2) grade
products
8 MHz (TYP.): VDD = 2.7 to 5.5 V
Subsystem clock (oscillation
XT1 (crystal) oscillation, external subsystem clock input (EXCLKS)
Standard
products, (A)
grade products
32.768 kHz (TYP.): VDD = 1.8 to 5.5 V
frequency)
(A2) grade
products
32.768 kHz (TYP.): VDD = 2.7 to 5.5 V
Internal low-speed oscillation
Internal oscillation
Standard
products, (A)
grade products
240 kHz (TYP.): VDD = 1.8 to 5.5 V
clock (for TMH1,
WDT)
(A2) grade
products
240 kHz (TYP.): VDD = 2.7 to 5.5 V
General-purpose registers
8 bits
× 32 registers (8 bits × 8 registers × 4 banks)
0.1
s (high-speed system clock: @ fXH = 20 MHz operation)
0.25
s (TYP.) (internal high-speed oscillation clock: @ fRH = 8 MHz (TYP.) operation)
Minimum instruction execution time
122
s (subsystem clock: @ fSUB = 32.768 kHz operation)
Instruction set
8-bit operation, 16-bit operation
Multiply/divide (8 bits
× 8 bits, 16 bits ÷ 8 bits)
Bit manipulate (set, reset, test, and Boolean operation)
BCD adjust, etc.
I/O ports
Total:
55
CMOS I/O:
50
CMOS output:
1
N-ch open-drain I/O (6 V tolerance): 4
Notes 1. The internal flash memory capacity, internal high-speed RAM capacity, and internal expansion RAM
capacity can be changed using the internal memory size switching register (IMS) and the internal
expansion RAM size switching register (IXS).
2. Memory banks to be used can be changed using the bank select register (BANK).
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