參數(shù)資料
型號(hào): UPA1704G
廠商: NEC Corp.
元件分類: 功率晶體管
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 63K
代理商: UPA1704G
Data Sheet D12908EJ1V1DS00
5
μ
PA1704
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
D
0
50
10
0
50
100
150
I
D
= 5.0 A
20
V
GS
= 4.0 V
V
GS
= 2.5 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
F
0.1
0
1
10
100
0.5
1.0
1.5
Pulsed
0 V
2.5 V
V
GS
= 4.0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
10
0.1
100
1 000
10 000
1
10
30
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
1
0.1
10
100
1 000
1
10
100
V
DS
= 15 V
V
GS
= 4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
r
t
f
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
r
1
0.1
10
1
10
100
1 000
100
di/dt = 100A/
V
GS
= 0 V
s
μ
V
G
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
Q
G
- Gate Charge - nC
V
D
0
5
10
15
20
30
35
25
40
10
20
30
2
1
4
3
6
5
0
I
D
= 10 A
V
GS
V
DS
V
= 24 V
15 V
6 V
相關(guān)PDF資料
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