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參數(shù)資料
| 型號(hào)： | UBA2030T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Full bridge driver IC(整橋驅(qū)動(dòng)器芯片) |
| 中文描述： | 0.32 A FULL BRDG BASED MOSFET DRIVER, PDSO24 |
| 封裝： | 7.50 MM, PLASTIC, SOT-137-1, SO-24 |
| 文件頁(yè)數(shù)： | 9/20頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | UBA2030T |
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1999 Aug 10
9
Philips Semiconductors
Preliminary specification
Full bridge driver IC
UBA2030T
CHARACTERISTICS
T
j
= 25
°
C; all voltages with respect to PGND; positive currents flow into the IC.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
High voltage
V
HV
I
L
high voltage supply
leakage current
0
570
5
V
μ
A
with HV = 570 V applied to pins
BER, SHR and SHL
V
PGND(float)
;
V
SGND(float)
Start-up, powered via the HV pin;
note 1
floating ground voltage
0
5
V
I
strtu
V
strtu
start-up current
start-up voltage
0.7
6
1.0
mA
V
high left and right MOSFETs off; low
left and right MOSFETs on
f
bridge
= 500 Hz; no load
V
th(osc strt)
start oscillating threshold
voltage
stop oscillating threshold
voltage
hysteresis voltage
14.0
15.5
17.0
V
V
th(osc stp)
11.5
13.0
14.5
V
V
hys
between oscillation start and stop
levels
f
bridge
= 500 Hz; no load; V
HV
= 50 V 0.3
f
bridge
= 500 Hz; no load; V
HV
= 50 V 14.0
f
bridge
= 500 Hz; no load; at start
oscillating threshold
f
bridge
= 500 Hz; no load; at stop
oscillating threshold
2.0
2.5
3.0
V
I
HV
V
DD
supply current
internal supply voltage (low
voltage)
0.5
15.3
11
0.7
16.5
11.5
mA
V
V
10.5
8.0
8.5
9.0
V
Output drivers
V
o(GHL,GHR)
output voltage on pins GHL
and GHR for gates of higher
right and left MOSFETs
output voltage on pins GLL
and GLR for gates of lower
right and left MOSFETs
time difference between
diagonally placed output
drivers
higher MOSFETs on
resistance
higher MOSFETs off
resistance
lower MOSFETs on
resistance
lower MOSFETs off
resistance
bootstrap diode voltage
drop
at power-up; no load; V
HV
= 50 V;
f
bridge
= 500 Hz;
13.2
14.5
16.5
V
V
o(GLL,GLR)
14.0
15.3
16.5
V
t
0
100
ns
R
onH
V
FSR
= V
FSL
= 15 V; I
source
= 50 mA
33
39
46
R
offH
V
FSR
= V
FSL
= 15 V; I
sink
= 50 mA
11
14
17
R
onL
V
DD
= 15 V; I
source
= 50 mA
33
39
46
R
offL
V
DD
= 15 V; I
sink
= 50 mA
11
14
17
V
diode
I
diode
= 1 mA
0.8
1.0
1.2
V
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