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參數(shù)資料
| 型號： | TRA2525 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Medium-Current Silicon Rectifiers |
| 中文描述： | 25 A, 250 V, SILICON, RECTIFIER DIODE |
| 封裝： | Microde Button, 2 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | TRA2525 |
TRA2525 MR3025
http://onsemi.com
4
Figure 6. Thermal Response
t, TIME (ms)
300
10
1
Figure 7. Typical Capacitance
V
R
, REVERSE VOLTAGE (V)
100
10
1
0.1
10
100
1000
Figure 8. Forward Recovery Time
Figure 9. Reverse Recovery Time
I
F
, FORWARD CURRENT (A)
I
R
/I
F
, RATIO OF REVERSE TO FORWARD CURRENT
10
1
0.1
1
10
1
0.1
1
10
100
C
T
T
r
100
0.1
10
–1
10
–2
10
0
T
J
= 25
°
C
,
F
V
FR
= 2.0 V
V
FR
= 1.0 V
,
R
I
F
= 1 A
I
F
= 10 A
R
JC(t)
= R
JC
r(t)
Note 1
To determine maximum junction temperature of the diode in a given
situation, the following procedure is recommended.
The temperature of the case should be measured using a thermocou-
ple placed on the case at the temperature reference point (see the
outline drawing on page 1). The thermal mass connected to the case
is normally large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulse operation once
steady state conditions are achieved.
Using the measured value of T
C
, the junction temperature may be
determined by:
T
J
= T
C
+ T
JC
Where T
JC
is the increase in junction temperature above the case
temperature, it may be determined by:
DUTY CYCLE, D = t
p
/t
1
PEAK POWER, P
pk
is peak of an
equivalent square power pulse
P
pk
P
pk
t
p
t
1
where:
NOTE 1
T
JC
= P
pk
R
JC
[D + (1 – D) r(t
1
+ t
p
) + r(t
p
) – r(t
1
)]
r(t) = normalized value of transient thermal resistance at
time, t, from Figure 6, i.e.:
V
F
T
J
= 25
°
C
T
FR
V
FR
T
J
= 25
°
C
T
RR
I
R
0.25 I
R
I
F
r(t
1
+ t
p
) = normalized value of transient thermal resistance
at time t
1
+ t
p
.
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TRA2525/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Medium-Current Silicon Rectifiers |
| TRA2532 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 32A 24-32V Transient RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| TRA2532/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Overvoltage Transient Suppresor |
| TRA25B103MGS | 功能描述:多層陶瓷電容器MLCC - 含引線 .010UF 50.0V RoHS:否 制造商:AVX 電容:470 pF 容差:10 % 電壓額定值:3 kV 端接類型:Radial 工作溫度范圍: 溫度系數(shù)/代碼:X7R 引線間隔:5.08 mm 產(chǎn)品:Automotive MLCCs 引線類型: |
| TRA25D223KGS | 功能描述:多層陶瓷電容器MLCC - 含引線 .022UF 100V 10% HT RoHS:否 制造商:AVX 電容:470 pF 容差:10 % 電壓額定值:3 kV 端接類型:Radial 工作溫度范圍: 溫度系數(shù)/代碼:X7R 引線間隔:5.08 mm 產(chǎn)品:Automotive MLCCs 引線類型: |
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