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參數(shù)資料
| 型號： | TPV8200B |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 184K |
| 代理商： | TPV8200B |
1
TPV8200B
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
The TPV8200B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metalliza-
tions and offers a high degree of reliability and ruggedness.
Including input and output matching networks, the TPV8200B features high
impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a
single fixed tuned circuit.
To be used class AB for TV band IV and V.
Specified 28 Volts, 860 MHz Characteristics
Output Power = 190 Watts (peak sync.)
Output Power = 150 Watts (CW)
Gain = 8 dB Min
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
30
Vdc
Collector–Base Voltage
65
Vdc
Emitter–Base Voltage
4
Vdc
Collector–Current — Continuous
20
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
250
1.43
Watts
W/
°
C
Quiescent Current (without RF drive)
ICQ
Tstg
2 x 500
mAdc
Storage Temperature Range
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
R
θ
JC
0.7
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 20 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 20 mAdc, IC = 0)
Collector–Emitter Leakage Current (VCE = 28 Vdc, RBE = 75
)
NOTE:
1. Thermal resistance is determined under specific RF condition.
V(BR)CEO
30
35
—
Vdc
V(BR)CBO
65
80
—
Vdc
V(BR)EBO
ICER
4
5
—
Vdc
—
—
15
mAdc
(continued)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by TPV8200B/D
SEMICONDUCTOR TECHNICAL DATA
190 W, 470–860 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 375A–01, STYLE 1
Motorola Preferred Device
REV 6
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