
TPV596A
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
Characteristic
Unit
Max
Typ
Min
Symbol
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 20 V, Pout = 0.5 W, f = 860 MHz, IE = 0.22 A)
Load Mismatch
(VCE = 20 V, Pout = 1.0 W, IE = 0.22 A, f = 860 MHz,
Load VSWR =
∞
:1, All Phase Angles)
GPE
11.5
12
—
dB
ψ
No Degradation in Output Power
Intermodulation Distortion, 3 Tone
(f = 860 MHz, VCE = 20 V, IE = 0.22 A, Pref = 1.0 W,
Vision Carrier = –8.0 dB, Sound Carrier = –7.0 dB,
Sideband Signal = –16 dB, Specification TV05001)
IMD1
—
—
–50
dB
Intermodulation Distortion (IDEM)
(f = 860 MHz, VCE = 20 V, IE = 0.22 A, Pref = 0.5 W,
Vision Carrier = –8.0 dB, Sound Carrier = –10 dB,
Sideband Signal = –16 dB)
IMD2
—
–60
–58
dB
Figure 1. Power Output versus Power Input
Figure 2. Large Signal Impedances
VCE = 20 V — IC = 220 mA
Figure 3. MTTF Factor versus Junction
Temperature
Figure 4. DC Safe Operating Area
ZOL* = Conjugate of the optimum load impedance into which the
device output operates at a given output power, voltage and
frequency.
o
I
M
2
6
100
TJ, JUNCTION TEMPERATURE (
°
C)
120
140
160
180
200
1
80
0.1
0.01
0.001
Pin, INPUT POWER (mW)
20
3
40
60
80
100
120
140
2.5
2
1.5
1
0.5
0
6
4
2
4
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
8
8
12
16
20
24
NOTE: DIVIDE MTTF BY IC2 TO
NOTE:
OBTAIN METAL LIFE
f = 860 MHz
VCE = 20 V
IC = 220 mA
IDEAL
REAL
THEATSINK = 70
°
C
0
0.2
f = 1 GHz
0.4
0.6
0.8
1
1.5
2
3
4
5
10
0
10
3
4
5
2
1.5
1
0.8
0.6
0.4
0.2
0.6
0.1
0.4
Zin
0.8
0.6
f = 1 GHz
ZOL*
0.4
0.4
0.6
0.8
1
1.5
2
3
4
5
10
TYPICAL CHARACTERISTICS
0.8
0.2
Zo = 50