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參數(shù)資料
| 型號(hào)： | TMS664414DGE-8A |
| 英文描述： | SDRAM|4X4MX4|CMOS|TSOP|54PIN|PLASTIC |
| 中文描述： | 內(nèi)存| 4X4MX4 |的CMOS |的TSOP | 54PIN |塑料 |
| 文件頁數(shù)： | 15/56頁 |
| 文件大?。?/td> | 958K |
| 代理商： | TMS664414DGE-8A |
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TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
15
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
interrupted bursts (continued)
nCCD = 2
CLK
DQ
READ Command
at Column Address C0
(see Note A)
C0
C0 + 1
C1
C1 + 1
C1 + 2
First Output Cycle for New
READ Command Begins Here
Interrupting
READ Command
at Column Address C1
(see Note A)
a) INTERRUPTED ON EVEN CYCLES
nCCD = 3
CLK
DQ
READ Command
at Column Address C0
(see Note A)
C0
C0 + 1
C0 + 2
C1
C1 + 1
First Output Cycle for New
READ Command Begins Here
Interrupting
READ Command
at Column Address C1
(see Note A)
b) INTERRUPTED ON ODD CYCLES
NOTE A: For this example, assume CAS latency = 2 and burst length > 2.
Figure 3. Read Burst Interrupted by Read Command
nCCD = 4
CLK
DQ
READ Command
at Column Address C0
(see Note A)
Interrupting
WRT Command
at Column Address C1
(see Note A)
C0
C1
C1 + 1
C1 + 2
First Input Cycle for New WRT
Command Begins Here
DQMx
See Note B
nCCD – 1
nCCD + 1
NOTES: A. For this example, read latency = 2 and burst length > 2.
B. DQMx must be high to mask output of the read burst on cycles (nCCD–1), (nCCD), and (nCCD+1).
Figure 4. Read Burst Interrupted by Write Command
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS664814DGE-10 | SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC |
| TMS664814DGE-8 | SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC |
| TMS664814DGE-8A | SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC |
| TMS6708-20DJ | x4 SRAM |
| TMS6708-25DJ | x4 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS664814 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS66481410 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS6648148 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS6648148A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS664814DGE-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC |
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