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參數(shù)資料
| 型號： | TMS28F010A-15C4DDE4 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | GT 2C 2#8 SKT RECP WALL RM |
| 中文描述： | 1048576位閃存電可擦除可編程只讀存儲器 |
| 文件頁數(shù)： | 7/22頁 |
| 文件大?。?/td> | 328K |
| 代理商： | TMS28F010A-15C4DDE4 |
TMS28F010A
1048576-BIT FLASH
ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
command register
The command register controls the program and erase functions of the TMS28F010A. The algorithm-selection
mode can be activated using the command register in addition to the above method. When V
PP
is high, the
contents of the command register and the function being performed can be changed. The command register
is written to when E is low and W is pulsed low. The address is latched on the leading edge of the pulse, while
the data is latched on the trailing edge. Accidental programming or erasure is minimized because two
commands must be executed to invoke either operation.
power supply considerations
Each device should have a 0.1-
μ
F ceramic capacitor connected between V
CC
and V
SS
to suppress circuit noise.
Changes in current drain on V
PP
require it to have a bypass capacitor as well. Printed-circuit traces for both
power supplies should be appropriate to handle the current demand.
Table 2. Command Definitions
COMMAND
REQUIRED
BUS
CYCLES
FIRST BUS CYCLE
SECOND BUS CYCLE
OPERATION
ADDRESS
DATA
OPERATION
ADDRESS
DATA
Read
1
Write
X
00h
Read
RA
RD
Algorithm-Selection Mode
3
Write
X
90h
Read
0000
0001
X
89h
B4h
20h
Set-Up-Erase/Erase
2
Write
X
20h
Write
Erase Verify
2
Write
EA
A0h
Read
X
EVD
Set-Up-Program/Program
2
Write
X
40h
Write
PA
PD
Program Verify
2
Write
X
C0h
Read
X
PVD
Reset
Modes of operation are defined in Table 1.
Legend:
EA
Address of memory location to be read during erase verify.
RA
Address of memory location to be read.
PA
Address of memory location to be programmed. Address is latched on the falling edge of W.
RD
Data read from location RA during the read operation.
EVD
Data read from location EA during erase verify.
PD
Data to be programmed at location PA. Data is latched on the rising edge of W.
PVD
Data read from location PA during program verify.
2
Write
X
FFh
Write
X
FFh
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS28F010A-15C4DDL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F010A-15C4DDL4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-15C4DDQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F010A-15C4DDQ4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-15C4DUE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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