參數(shù)資料
型號(hào)： TMS28F010A-12C4DDL4
廠商： Texas Instruments, Inc.
英文描述： 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
中文描述： 1048576位閃存電可擦除可編程只讀存儲(chǔ)器
文件頁數(shù)： 16/22頁
文件大小： 328K
代理商： TMS28F010A-12C4DDL4
TMS28F010A
1048576-BIT FLASH
ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993
16
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
timing requirements–write/erase/program operations
ALTERNATE
SYMBOL
’28F010A 10
’28F010A-10
’28F010A 12
’28F010A-12
PARAMETER
UNIT
MIN
NOM
MAX
MIN
NOM
MAX
tc(W)
tc(W)PR
tc(W)ER
th(A)
th(E)
th(WHD)
tsu(A)
tsu(D)
tsu(E)
tsu(EHVPP)
tsu(VPPEL)
trec(W)
trec(R)
tw(W)
tw(WH)
tr(VPP)
tf(VPP)
Cycle time, write using W
tAVAV
tWHWH1
tWHWH2
tWLAX
tWHEH
tWHDX
tAVWL
tDVWH
tELWL
tEHVP
tVPEL
tWHGL
tGHWL
tWLWH
tWHWL
tVPPR
tVPPF
100
120
ns
μ
s
ms
Cycle time, programming operation
10
10
Cycle time, erase operation
9.5
10
9.5
10
Hold time, address
55
60
ns
Hold time, E
0
0
ns
Hold time, data valid after W high
10
10
ns
Setup time, address
0
0
ns
Setup time, data
50
50
ns
Setup time, E before W
20
20
ns
Setup time, E high to VPP ramp
Setup time, VPP to E low
Recovery time, W before read
100
100
ns
μ
s
μ
s
μ
s
ns
1.0
1.0
6
6
Recovery time, read before W
0
0
Pulse duration, W (see Note 5)
60
60
Pulse duration, W high
20
20
ns
μ
s
μ
s
Rise time, VPP
Fall time, VPP
1
1
1
1
ALTERNATE
SYMBOL
’28F010A 15
’28F010A-15
’28F010A 17
’28F010A-17
PARAMETER
UNIT
MIN
NOM
MAX
MIN
NOM
MAX
tc(W)
tc(W)PR
tc(W)ER
th(A)
th(E)
th(WHD)
tsu(A)
tsu(D)
tsu(E)
tsu(EHVPP)
tsu(VPPEL)
trec(W)
trec(R)
tw(W)
tw(WH)
tr(VPP)
tf(VPP)
NOTE 5: Rise/fall time
≤
10 ns.
Cycle time, write using W
tAVAV
tWHWH1
tWHWH2
tWLAX
tWHEH
tWHDX
tAVWL
tDVWH
tELWL
tEHVP
tVPEL
tWHGL
tGHWL
tWLWH
tWHWL
tVPPR
tVPPF
150
170
ns
μ
s
ms
Cycle time, programming operation
10
10
Cycle time, erase operation
9.5
10
9.5
10
Hold time, address
60
70
ns
Hold time, E
0
0
ns
Hold time, data valid after W high
10
10
ns
Setup time, address
0
0
ns
Setup time, data
50
50
ns
Setup time, E before W
20
20
ns
Setup time, E high to VPP ramp
Setup time, VPP to E low
Recovery time, W before read
100
100
ns
μ
s
μ
s
μ
s
ns
1.0
1.0
6
6
Recovery time, read before W
0
0
Pulse duration, W (see Note 5)
60
60
Pulse duration, W high
20
20
ns
μ
s
μ
s
Rise time, VPP
Fall time, VPP
1
1
1
1
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