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參數(shù)資料
| 型號(hào)： | TMS28F010A-12C3DDL4 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| 中文描述： | 1048576位閃存電可擦除可編程只讀存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 3/22頁(yè) |
| 文件大?。?/td> | 328K |
| 代理商： | TMS28F010A-12C3DDL4 |
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TMS28F010A
1048576-BIT FLASH
ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
device symbol nomenclature
PEP4 Burn-In
4 = 168-Hour Burn-In
(blank if no burn-in)
Temperature Range Designator
L
=
0
°
C
E
=
– 40
°
C
Q
=
– 40
°
C
to 70
°
C
to 85
°
C
to 125
°
C
Package Designator
N =
FM =
DD =
DU =
Plastic Dual In-Line Package
Plastic Leaded Chip Carrier
Thin Small-Outline Package
Thin Small-Outline Package,
Reverse Pinout
Program/Erase Endurance
C4 = 10 000 Cycles
C3 = 1 000 Cycles
Speed Designator
-10 = 100 ns
-12 = 120 ns
-15 = 150 ns
-17 = 170 ns
-12
C4
FM
L
4
TMS28F010A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS28F010A-12C3DDQ4 | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C3DUE4 | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C3FME4 | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C3FML4 | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C3NE4 | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS28F010A-12C3DDQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F010A-12C3DDQ4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C3DUE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F010A-12C3DUE4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C3DUL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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