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參數(shù)資料
| 型號： | TMS28F010A-12C3DDE4 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| 中文描述： | 1048576位閃存電可擦除可編程只讀存儲器 |
| 文件頁數(shù)： | 15/22頁 |
| 文件大?。?/td> | 328K |
| 代理商： | TMS28F010A-12C3DDE4 |
TMS28F010A
1048576-BIT FLASH
ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993
15
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature
PARAMETER
TEST
ALTERNATE
SYMBOL
’28F010A-10
MIN
’28F010A-12
MIN
’28F010A-15
MIN
’28F010A-17
MIN
UNIT
CONDITIONS
MAX
MAX
MAX
MAX
ta(A)
Access time from
address, A0–A16
tAVQV
100
120
150
170
ns
ta(E)
Access time from
chip enable, E
tELQV
100
120
150
170
ns
ten(G)
Access time from
output enable, G
tGLQV
45
50
55
60
ns
tc(R)
Cycle time, read
tAVAV
100
120
150
170
ns
td(E)
Delay time, E low
to low-Z output
CL = 100 pF,
1 Series 74
TTL load,
≤
Input tr
20 ns,
Input tf
≤
20 ns
tELQX
0
0
0
0
ns
td(G)
Delay time, G low
to low-Z output
tGLQX
0
0
0
0
ns
tdis(E)
Chip disable time
to hi-Z output
tEHQZ
0
55
0
55
0
55
0
55
ns
tdis(G)
Output disable
time to hi-Z
output
tGHQZ
0
30
0
30
0
35
0
35
ns
th(D)
Hold time, data
valid from
address, E, or G
tAXQX
0
0
0
0
ns
trec(W)
Write recovery
time before read
tWHGL
6
6
6
6
μ
s
Whichever occurs first.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS28F010A-12C3DDL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F010A-12C3DDL4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C3DDQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F010A-12C3DDQ4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-12C3DUE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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