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參數(shù)資料
| 型號(hào)： | TMS28F010A-10C4FML4 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| 中文描述： | 1048576位閃存電可擦除可編程只讀存儲(chǔ)器 |
| 文件頁數(shù)： | 9/22頁 |
| 文件大?。?/td> | 328K |
| 代理商： | TMS28F010A-10C4FML4 |
TMS28F010A
1048576-BIT FLASH
ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993
9
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
program-verify command
The TMS28F010A can be programmed sequentially or randomly because it is programmed one byte at a time.
Each byte must be verified after it is programmed. The program-verify operation prepares the device to verify
the most recently programmed byte. To invoke the program-verify operation, C0h must be written into the
command register. The program-verify operation ends on the rising edge of W.
While verifying a byte, the TMS28F010A applies an internal margin voltage to the designated byte. If the true
data and programmed data match, programming continues to the next designated byte location; otherwise, the
byte must be reprogrammed. Figure 1 shows how commands and bus operations are combined for byte
programming.
reset command
To reset the TMS28F010A after set-up-erase command or set-up-program command operations without
changing the contents in memory, write FFh into the command register two consecutive times. After executing
the reset command, a valid command must be written into the command register to change to a new state.
Fastwrite algorithm
The TMS28F010A is programmed using the Texas Instruments Fastwrite algorithm shown in Figure 1. This
algorithm programs in a nominal time of two seconds.
Fasterase algorithm
The TMS28F010A is erased using the Texas Instruments Fasterase algorithm shown in Figure 2. The memory
array needs to be completely programmed (using the Fastwrite algorithm) before erasure begins. Erasure
typically occurs in one second.
parallel erasure
To reduce total erase time, several devices can be erased in parallel. Since each Flash EEPROM can erase
at a different rate, every device must be verified separately after each erase pulse. After a given device has been
successfully erased, the erase command should not be issued to this device again. All devices that complete
erasure should be masked until the parallel erasure process is finished (see Figure 3).
Examples of how to mask a device during parallel erase include driving the E pin high, writing the read command
(00h) to the device when the others receive a set-up-erase or erase command, or disconnecting it from all
electrical signals with relays or other types of switches.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS28F010A-10C4FMQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F010A-10C4FMQ4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-10C4NE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F010A-10C4NE4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-10C4NL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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