參數(shù)資料
型號(hào): TMS27C512-120JL4
英文描述: x8 EPROM
中文描述: x8存儲(chǔ)器
文件頁(yè)數(shù): 7/13頁(yè)
文件大小: 184K
代理商: TMS27C512-120JL4
TMS27C512 65536 BY 8-BIT UV ERASABLE
TMS27PC512 65536 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS512G – NOVEMBER 1985 – REVISED SEPTEMBER 1997
7
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
recommended operating conditions
MIN
4.5
NOM
MAX
5.5
UNIT
VCC
Supply voltage
Read mode (see Note 2)
5
V
SNAP! Pulse programming algorithm
6.25
6.5
6.75
G/VPP
Supply voltage
SNAP! Pulse programming algorithm
12.75
13
13.25
V
VIH
High level dc input voltage
High-level dc input voltage
TTL
2
VCC+1
VCC+1
V
CMOS
VCC– 0.2
– 0.5
VIL
Low level dc input voltage
Low-level dc input voltage
TTL
0.8
V
CMOS
– 0.5
0.2
TA
Operating free-air
temperature
TMS27C512-_ _JL
TMS27PC512-_ _FML
0
70
°
C
TA
Operating free-air
temperature
TMS27C512-_ _JE
TMS27PC512-_ _FME
– 40
85
°
C
NOTE 2: VCC must be applied before or at the same time as G/VPP and removed after or at the same time as G/VPP. The device must not be
inserted into or removed from the board when VPP or VCC is applied.
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature
PARAMETER
TEST CONDITIONS
IOH = – 2.5 mA
IOH = – 20
μ
A
IOL = 2.1 mA
IOL = 20
μ
A
VI = 0 V to 5.5 V
VO = 0 V to VCC
G/VPP = 13 V
VCC = 5.5 V,
VCC = 5.5 V,
VCC = 5.5 V,
tcycle = minimum cycle time,
outputs open
MIN
3.5
TYP
MAX
UNIT
VOH
High level dc output voltage
High-level dc output voltage
V
VCC– 0.1
VOL
Low level dc output voltage
Low-level dc output voltage
0.4
V
0.1
±
1
±
1
50
II
IO
IPP
Input current (leakage)
μ
A
μ
A
mA
Output current (leakage)
G/VPP supply current (during program pulse)
35
ICC1
VCCsupply current (standby)
VCC supply current (standby)
TTL-input level
E = VIH
E = VCC
E = VIL,
. . . . .
250
500
μ
A
CMOS-input level
. . . . .
100
250
ICC2
VCC supply current (active)
15
30
mA
Typical values are at TA = 25
°
C and nominal voltages.
capacitance over recommended ranges of supply voltage and operating free-air
temperature, f = 1 MHz
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CI
CO
CG/VPP
Capacitance measurements are made on a sample basis only.
Typical values are at TA = 25
°
C and nominal voltages.
Input capacitance
VI = 0 V,
VO = 0 V,
G/VPP = 0 V,
f = 1 MHz
6
10
pF
Output capacitance
f = 1 MHz
10
14
pF
G/VPP input capacitance
f = 1 MHz
20
25
pF
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