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參數(shù)資料
| 型號(hào)： | TIP32B |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistors(互補(bǔ)型，塑料功率晶體管) |
| 中文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | TIP32B |
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
http://onsemi.com
4
t, TIME (ms)
1.0
0.7
0.01
0.01
0.1
0.07
r
1.0
1.0
100
Z
JC(t)
= r(t) R
JC
R
JC
(t) = 3.125
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
Z
JC(t)
P
(pk)
t
1
t
2
SINGLE PULSE
1.0 k
D = 0.5
0.05
DUTY CYCLE, D = t
1
/t
2
Figure 4. Thermal Response
0.1
0.05
0.03
0.02
0.5
0.3
0.2
0.02
0.05
0.2
0.5
2.0
5.0
200
500
10
20
50
0.2
0.02
0.01
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
20
5.0
50
100
Figure 5. Active Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN
LIMITED @ T
J
≤
150
°
C
THERMAL LIMIT @ T
C
= 25
°
C
(SINGLE PULSE)
BONDING WIRE LIMIT
1.0ms
100 s
2.0
1.0
10
5.0
I
5.0ms
CURVES APPLY
BELOW RATED V
CEO
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
0.1
0.2
0.7
0.03
0.3
0.5
0.07
I
C
, COLLECTOR CURRENT (AMP)
Figure 6. TurnOff Time
3.0
2.0
t
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
1.0
2.0
3.0
0.2
0.5
1.0
5.0
0.1
2.0 3.0
0.3
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C
200
100
70
50
30
10
20
40
30
t
f
@ V
CC
= 30 V
t
f
@ V
CC
= 10 V
t
s
′
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′
= t
s
1/8 t
f
T
J
= 25
°
C
T
J
= +25
°
C
C
eb
C
cb
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIP31C | Complementary Silicon Plastic Power Transistors(互補(bǔ)型硅塑料功率晶體管) |
| TIP31B | Complementary Silicon Plastic Power Transistors(互補(bǔ)型，塑料功率晶體管) |
| TIP32C | Complementary Silicon Plastic Power Transistors(互補(bǔ)型，塑料功率晶體管) |
| TIP33 | NPN SILICON POWER TRANSISTORS |
| TIP33A | NPN SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIP32-B | 功能描述:兩極晶體管 - BJT 3.0A 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP32B-BP | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Silicon PNP Power Transistors |
| TIP32BG | 功能描述:兩極晶體管 - BJT 3A 80V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP32-BP | 功能描述:兩極晶體管 - BJT 3.0A 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP32B-S | 功能描述:兩極晶體管 - BJT 80V 3A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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