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參數(shù)資料
| 型號： | TEA1098AH |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Speech and handsfree IC |
| 中文描述： | 免提語音和集成電路 |
| 文件頁數(shù)： | 25/40頁 |
| 文件大?。?/td> | 185K |
| 代理商： | TEA1098AH |
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2000 Mar 21
25
Philips Semiconductors
Preliminary specification
Speech and handsfree IC
TEA1098A
TX
AMPLIFIER USING
HFTX (
PINS
HFTX
AND
LN)
G
v(HFTX-LN)
voltage gain from pin
HFTX to LN
gain variation with
frequencyreferencedto
1 kHz
gain variation with
temperaturereferenced
to 25
°
C
total harmonic
distortion at LN
maximum input voltage
at HFTX (RMS value)
noise output voltage at
pin LN; pin HFTX
shorted to GND
through 200
in series
with 10
μ
F
gain reduction when
muted
gain reduction in
microphone mute mode
V
HFTX
= 15 mV (RMS)
33.5
34.7
35.9
dB
G
v(f)
f = 300 to 3400 Hz
±
0.25
dB
G
v(T)
T
amb
=
25 to +75
°
C
±
0.35
dB
THD
V
LN
= 1.4 V (RMS)
2
%
V
HFTX(rms)
I
line
= 70 mA; THD = 2%
85
mV
V
no(LN)
psophometrically weighted
(p53 curve)
77
dBmp
G
v(m)
MUTE = 0; see Table 2
60
80
dB
G
v(MIC)(mute)
MUTE = 1; BPC = 0;
see Table 2
60
dB
RX amplifiers
RX
AMPLIFIERS USING
IR (
PINS
IR
AND
RECO)
G
v(IR-RECO)(HF)
voltage gain from IR to
RECO (handsfree
mode)
voltage gain from IR to
RECO (handset mode)
digital volume control
adjustment range in
handset mode
digital volume control
adjustment step in
handset mode
gain variation with
frequency referred to
1 kHz
gain variation with
temperaturereferenced
to 25
°
C
maximum input voltage
on IR (referenced to
LN) (RMS value)
V
IR
= 4 mV (RMS); HFC = 1
28.4
29.4
30.4
dB
G
v(IR-RECO)(HS)
V
IR
= 4 mV (RMS);HFC = 0;
EVCI = 0
V
IR
= 4 mV (RMS);HFC = 0;
EVCI = V
DD
16.2
17.2
18.2
dB
G
v(IR-RECO)
13
14.5
16
dB
G
v(IR-RECO)
HFC = 0; per step
+4.85
dB
G
v(f)
f = 300 to 3400 Hz
±
0.25
dB
G
v(T)
T
amb
=
25 to +75
°
C
±
0.3
dB
V
IR(rms)(max)
I
line
= 70 mA; THD = 2%
50
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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