參數(shù)資料
型號(hào): TDA8003TS
廠商: NXP Semiconductors N.V.
英文描述: IIC-bus SIM Card Interface(IIC總線SIM卡接口)
中文描述: IIC總線的SIM卡接口(IIC總線的SIM卡接口)
文件頁數(shù): 8/24頁
文件大?。?/td> 111K
代理商: TDA8003TS
2000 Apr 20
16
Philips Semiconductors
Product specication
I2C-bus SIM card interface
TDA8003TS
Pin VCC
VO
output voltage
inactive mode; IO =1mA
0.4
V
active mode; 5 V card; no load
4.85
5.10
5.40
V
active mode; 3 V card; no load
2.8
3.05
3.22
V
active mode; with 200 nF capacitor;
including static load (up to 20 mA)
and dynamic current pulses;
Imax = 200 mA, fmax = 5 MHz;
duration <400 ns
5 V card; 40 nAs pulses
4.60
5.40
V
3 V card; 24 nAs pulses
2.75
3.22
V
IO
output current
inactive mode; pin VCC short circuit
to ground
1mA
VCC =5or3V; VDD = 2.5 V
15
mA
VCC =5or3V; VDD = 5.5 V
40
mA
I
CC
output current
VCC short circuit to ground
120
mA
SR
slew rate on VCC (rise and fall) CL(max) = 300 nF
0.05
0.17
0.25
V/
s
Pin I/O
VO
output voltage
inactive mode; IO =1mA
0.4
V
IO
output current
inactive mode; pin I/O short circuit
to ground
1mA
VOL
LOW-level output voltage
IOL =1mA
0.2
+0.4
V
VOH
HIGH-level output voltage
+25 < IOH < 25 A
0.8VCC
VCC + 0.2 V
VIL
LOW-level input voltage
0.3
+0.8
V
VIH
HIGH-level input voltage
1.5
VCC + 0.3 V
ILIH
HIGH-level input leakage
current
10
A
IIL
LOW-level input current
600
A
tt(DI)
data input transition time
CL =30pF
1
s
tt(DO)
data output transition time
CL =30pF
0.5
s
td
delay time on falling edge
500
ns
Rpu(int)
internal pull-up resistance
between pins I/O and VCC
C1 version
8
13
k
C2 version
13
18
k
Pin SIMI/O
VOL
LOW-level output voltage
IOL =1mA
0.2
+0.3
V
VOH
HIGH-level output voltage
with internal 20 k
pull-up resistor
to VDDI; IO =10 A
VDDI 0.3
VDDI + 0.2 V
VIL
LOW-level input voltage
0.3
+0.3VDDI
V
VIH
HIGH-level input voltage
0.7VDDI
VDDI + 0.3 V
ILIH
HIGH-level input leakage
current
10
A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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