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參數(shù)資料
| 型號(hào)： | TC1220ECH |
| 廠商： | Microchip Technology Inc. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Switched Capacitor Voltage Converters with Shutdown in SOT Packages |
| 中文描述： | 開關(guān)電容電壓轉(zhuǎn)換器與關(guān)機(jī)采用SOT封裝 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 482K |
| 代理商： | TC1220ECH |
TC1219/TC1220
DS21366B-page 6
2002 Microchip Technology Inc.
4.3
Capacitor Selection
In order to maintain the lowest output resistance and
output ripple voltage, it is recommended that low ESR
capacitors be used. Additionally, larger values of C1
will lower the output resistance and larger values of
C2 will reduce output ripple. (Equation 4-1(b) and
Equation 4-3).
Table 4-1 shows various values of C1 and the
corresponding output resistance values @ +25
°
C. It
assumes a 0.1
ESR
C1
and 2
R
SWITCH
. Table 4-2
shows the output voltage ripple for various values of
C2. The V
RIPPLE
values assume 10mA output load
current and 0.1
ESR
C2
.
TABLE 4-1:
OUTPUT RESISTANCE VS.
C1 (ESR = 0.1
)
TABLE 4-2:
OUTPUT VOLTAGE RIPPLE
VS. C2 (ESR = 0.1
)
I
OUT
10mA
4.4
Input Supply Bypassing
The V
IN
input should be capacitively bypassed to
reduce AC impedance and minimize noise effects due
to the internal switching of the device The
recommended capacitor depends on the configuration
of the TC1219/TC1220.
4.5
Shutdown Input
The TC1219/TC1220 is enabled when SHDN is high,
and disabled when SHDN is low. This input cannot be
allowed to float. (If SHDN is not required, see the
TCM828/829 data sheet.) The SHDN input can be only
driven to 0.5V above V
IN
to avoid significant current
flows.
4.6
Voltage Inverter
The most common application for charge pump
devices is the inverter (Figure 4-3). This application
uses two external capacitors: C1 and C2 (plus a power
supply bypass capacitor, if necessary). The output is
equal to -V
IN
plus any voltage drops due to loading.
Refer to Table 4-1 and Table 4-2 for capacitor
selection.
FIGURE 4-3:
VOLTAGE INVERTER
TEST CIRCUIT
C1 (
μ
F)
TC1219
R
OUT
(
)
100
42
25
19.3
TC1220
R
OUT
(
)
45
25
19.4
17.5
1
3.3
10
30
C2 (
μ
F)
TC1219
V
RIPPLE
(mV)
419
128
44
16
TC1220
V
RIPPLE
(mV)
145
45
16
7
1
3.3
10
30
3
5
2
4
1
C3
C1
C2
V
IN
V
OUT
R
L
TC1219
TC1220
C1
–
SHDN
IN
OUT
C1+
GND
Device
TC1219 10
μ
F 10
μ
F 10
μ
F
TC1220 3.3
μ
F 3.3
μ
F 3.3
μ
F
C1
C2
C3
6
+
+
+
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