參數(shù)資料
型號: TC1185-2.7VCT713
廠商: Microchip Technology Inc.
英文描述: 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass
中文描述: 50毫安,100 mA和一百五毫安的CMOS關(guān)機(jī)和參考繞道低壓降穩(wěn)壓器
文件頁數(shù): 3/22頁
文件大?。?/td> 618K
代理商: TC1185-2.7VCT713
2007 Microchip Technology Inc.
DS21335E-page 3
TC1014/TC1015/TC1185
TEMPERATURE CHARACTERISTICS
Output Noise
eN
600
nV/
Hz
I
L
= I
OUT
MAX
,
F = 10 kHz
470 pF from Bypass
to GND
SHDN Input High Threshold
V
IH
V
IL
45
%V
IN
%V
IN
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
SHDN Input Low Threshold
15
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications:
V
IN
= V
R
+ 1V, I
L
= 100 μA, C
L
= 1.0 μF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Symbol
Min
Typ
Max
Units
Device
Test Conditions
Note
1:
2:
3:
The minimum V
IN
has to meet two conditions: V
IN
2.7V and V
IN
V
R
+ V
DROPOUT
.
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
)x 10
6
V
OUT
x
T
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
, T
,
θ
). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
Apply for Junction Temperatures of -40°C to +85°C.
5:
6:
7:
8:
Electrical Specifications:
V
IN
= V
R
+ 1V, I
L
= 100 μA, C
L
= 1.0 μF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges:
Extended Temperature Range
T
A
T
A
T
A
-40
+125
°C
Operating Temperature Range
-40
+125
°C
Storage Temperature Range
-65
+150
°C
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
θ
JA
256
°C/W
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