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參數(shù)資料
| 型號(hào)： | T2323 |
| 廠商： | Motorola, Inc. |
| 英文描述： | SENSITIVE GATE TRIACs 2.5 AMPERES RMS 200 thru 600 VOLTS |
| 中文描述： | 靈敏柵極可控硅2.5安培RMS的200到600伏 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | T2323 |
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
3.5
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25
°
C
TJ = 100
°
C
IDRM
—
—
—
0.2
10
0.75
μ
A
mA
Peak On-State Voltage*
(ITM = 10 A)
T2323 Series
T2322 Series
VTM
—
—
1.7
1.7
2.6
2.2
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 30
)
All Modes
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–),I G(+)
T2322 Series
T2323 Series
T2323 Series
IGT
—
—
—
—
—
—
10
25
40
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30
, TC = 25
°
C)
(VD = VDRM, RL = 125
, TC = 100
°
C)
VGT
—
0.15
1
—
2.2
—
Volts
Holding Current
(VD = 12 V, ITM = 150 mA, Gate Open)
IH
—
15
30
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA)
tgt
—
1.8
2.5
μ
s
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 100
°
C)
dv/dt
10
100
—
V/
μ
s
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, TC = 90
°
C)
300
μ
s, Duty Cycle
dv/dt(c)
1
4
—
V/
μ
s
*Pulse Test: Pulse Width
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T2323A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:2.5-A SENSITIVE GATE SILICON TRIACS |
| T2323B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:2.5-A SENSITIVE GATE SILICON TRIACS |
| T2323D | 制造商:ONS 功能描述:ON SEMICONDUCTOR S7D9A |
| T2323E | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:2.5-A SENSITIVE GATE SILICON TRIACS |
| T2323M | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:2.5-A SENSITIVE GATE SILICON TRIACS |
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