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參數(shù)資料
| 型號： | SUP70N04-10 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 70A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 40V的五（巴西）直| 70A條（?。﹟ TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 203K |
| 代理商： | SUP70N04-10 |
SPICE Device Model SUP/SUB70N03-09BP
Vishay Siliconix
www.vishay.com
2
Document Number: 71701
02-Oct-01
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbo
l
Test Condition
Simulate
d Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.5
V
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10V
604
A
V
GS
= 10V, I
D
= 30A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 10V, I
D
= 30A,
T
J
= 125°C
V
GS
= 10V, I
D
= 30A,
T
J
= 175°C
V
DS
= 15V, I
D
= 30A
I
S
= 70A, V
GS
= 0 V
0.007
0.007
0.010
0.010
0.0085
Drain-Source On-State
Resistance
r
DS(on)
0.0095
Forward Transconductance
a
Forward Voltage
a
Dynamic
b
g
fs
V
SD
45
45
S
0.92
1.1
V
Input Capacitance
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
1484
1500
Output Capacitance
465
530
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
V
GS
= 0V, V
DS
= 25V,
f = 1 MHz
153
240
pf
15
15.5
5
5
V
DS
= 15V, V
GS
= 5V,
I
D
= 70A
6
6
nC
10
10
13
8
26
25
V
DD
= 15V, R
L
= 0.21
I
D
70A, V
GEN
= 10V,
R
G
= 2.5
34
9
Reverse Recovery Time
t
rr
I
F
= 70A, di/dt = 100 A/
μ
s
20
30
ns
Notes
a. Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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| SUP70N04-10-E3 | 功能描述:MOSFET 40V 70A 120W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP70N06-14 | 功能描述:MOSFET 60V 70A 142W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP70N06-14-E3 | 功能描述:MOSFET 60V 70A 142W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP75N03-04 | 功能描述:MOSFET 30V 75A 187W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP75N03-04-E3 | 功能描述:MOSFET 30V 75A 187W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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