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參數(shù)資料
| 型號： | SUD50N03-07AP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 74K |
| 代理商： | SUD50N03-07AP |
SUD50N02-06
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 71136
S-01665—Rev. B, 31-Jul-00
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
20
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125 C
50
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
50
A
D i S
Drain-Source On-State Resistance
O S
b
V
GS
= 4.5 V, I
D
= 30 A
0.006
r
DS(on)
V
GS
= 4.5 V, I
D
=30 A, T
J
= 125 C
0.009
V
GS
= 2.5 V, I
D
= 20 A
0.009
Forward Transconductance
b
g
fs
V
DS
= 5 V, I
D
= 30 A
20
S
Dynamic
a
Input Capacitance
C
iss
6600
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 20 V, f = 1 MHz
1150
pF
Reverse Transfer Capacitance
C
rss
600
Total Gate Charge
c
Q
g
V
DS
= 10 V V
V
GS
= 4.5 V, I
D
= 50 A
4 5 V I
65
130
Gate-Source Charge
c
Q
gs
13
nC
Gate-Drain Charge
c
Q
gd
14
Turn-On Delay Time
c
t
d(on)
V
= 10 V, R
= 0.2
50 A V
50 A, V
GEN
= 4.5 V, R
G
= 2.5
10 V R
0 2
25
40
Rise Time
c
t
r
I
D
4 5 V R
2 5
120
180
ns
Turn-Off Delay Time
c
t
d(off)
80
120
Fall Time
c
t
f
100
150
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
I
SM
100
A
Diode Forward Voltage
b
V
SD
I
F
= 100 A, V
GS
= 0 V
1.2
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ s
45
100
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50N03-07AP | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
| SUD50N03-07AP-E3 | 功能描述:MOSFET 30V 25A 88W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N03-07-E3 | 功能描述:MOSFET 30V 20A 83W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N03-07-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUD50N03-07-T4 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 30V 20A 3-Pin(2+Tab) DPAK T/R |
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