參數(shù)資料
型號: SUB60N04-15L
元件分類: 參考電壓二極管
英文描述: Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
中文描述: 250 的低電流運算,低反向泄露,低噪聲穩(wěn)壓二極管
文件頁數(shù): 3/8頁
文件大?。?/td> 112K
代理商: SUB60N04-15L
SUB60N04-15LT
Vishay Siliconix
New Product
Document Number: 70942
S-00718—Rev. C, 03-Apr-00
www.vishay.com FaxBack 408-970-5600
2-3
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 1 mA
40
V
V
GS
Clamp Voltage
V
GS
V
DS
= 0 V, I
G
= 20 A
10
20
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 1 mA
1
2
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
5 V
250
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 35 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 35 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 35 V, V
GS
= 0 V, T
J
= 175 C
250
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= 10 V, I
D
= 20 A
0.0095
0.012
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.018
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
0.024
V
GS
= 4.5 V, I
D
= 20 A
0.012
0.015
Sense Diode Forward Voltage
V
FD1
I
F
= 250 A
675
735
V
FD2
I
F
= 250 A
675
735
mV
Sense Diode Forward Voltage Increase
V
F
From I
F
= 125 A to I
F
= 250 A
25
50
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
35
S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
0 V V
25 V f
1920
Output Capacitance
C
oss
560
pF
Reverse Transfer Capacitance
C
rss
210
Total Gate Charge
c
Q
g
V
DS
= 20 V V
V
GS
= 10 V, I
D
= 25 A
10 V I
51
70
Gate-Source Charge
c
Q
gs
5.5
nC
Gate-Drain Charge
c
Q
gd
12
Turn-On Delay Time
c
t
d(on)
20
40
Rise Time
c
t
r
V
= 20 V, R
= 0.8
DD
25 A, V
GEN
= 10 V, R
G
= 2.5
70
120
ns
Turn-Off Delay Time
c
t
d(off)
L
I
D
35
70
Fall Time
c
t
f
20
40
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
60
A
Pulsed Current
I
SM
240
Forward Voltage
a
V
SD
I
F
= 60 A, V
GS
= 0 V
1.4
V
Reverse Recovery Time
t
rr
I
F
= 60 A, di/dt = 100 A/ s
40
60
ns
Notes:
a
b.
c
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
相關PDF資料
PDF描述
SUB60N04-15LT Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
SUB70N03-09BP Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
SUB70N04-10 TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 70A I(D) | TO-263AB
SUP70N04-10 TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 70A I(D) | TO-220AB
SUD40N06-24 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
相關代理商/技術參數(shù)
參數(shù)描述
SUB60N04-15LT 功能描述:MOSFET 40V 60A 110W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUB60N06-18 功能描述:MOSFET 60V 60A 120W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUB60N06-18-E3 功能描述:MOSFET 60V 60A 120W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUB61/6100A/100R/ 制造商:Eurotherm Inc 功能描述:SHUNT RESISTOR, Sensing Element:-, Operating Temperature Min:0C, Operating Temp
SUB61/6100A/250R/ 制造商:Eurotherm Inc 功能描述:SHUNT RESISTOR, Sensing Element:-, Operating Temperature Min:0C, Operating Temp