- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372370 > STW20NA50 (意法半導(dǎo)體) N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | STW20NA50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強(qiáng)型功率MOS器件 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 127K |
| 代理商： | STW20NA50 |
STW20NK70Z
2/6
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
dv/dt (1)
Peak Diode Recovery voltage slope
T
j
T
stg
Storage Temperature
( )
Pulse width limited by safe operating area
(1) I
SD
≤
17A, di/dt
≤
TBDA/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
700
V
700
V
± 30
V
20
A
12
A
80
A
300
W
2.4
W/°C
TBD
V
TBD
V/ns
Operating Junction Temperature
-55 to 150
°C
Thermal Resistance Junction-case Max
0.42
°C/W
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
50
300
°C/W
°C
Parameter
Max Value
TBD
Unit
A
TBD
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STW20NM60 | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STW20NC50 | N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh⑩II MOSFET |
| STW20NM50 | N-CHANNEL 500V - 0.20ohm - 20A TO-247 MDmesh⑩Power MOSFET |
| STW220NF75 | N-CHANNEL 75V - 0.004 OHM - 120A TO-247 STRIPFET II POWER MOSFET |
| STW240NF55 | N-CHANNEL 55V - 0.0027 OHM - 120A TO-247 STRIPFET II POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW20NB50 | 功能描述:MOSFET N-Ch 500 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW20NC50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh⑩II MOSFET |
| STW20NK50Z | 功能描述:MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW20NK50Z | 制造商:STMicroelectronics 功能描述:MOSFET N TO-247 |
| STW20NK70Z | 功能描述:MOSFET N-Ch 700 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。