參數(shù)資料
型號: STTH120R04TV1
廠商: STMICROELECTRONICS
元件分類: 整流器
英文描述: 60 A, 400 V, SILICON, RECTIFIER DIODE
封裝: ROHS COMPLIANT, PLASTIC, ISOTOP-4
文件頁數(shù): 3/7頁
文件大?。?/td> 117K
代理商: STTH120R04TV1
STTH120R04TV
Characteristics
3/7
Table 4.
Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
trr
Reverse recovery time
IF = 1 A, dIF/dt = -50 A/s,
VR = 30 V, Tj = 25° C
80
ns
IF = 1 A, dIF/dt = -100 A/s,
VR = 30 V, Tj = 25° C
40
55
IF = 1 A, dIF/dt = -200 A/s,
VR = 30 V, Tj = 25° C
31
45
IRM
Reverse recovery current
IF = 60 A, dIF/dt = -200 A/s,
VR = 320 V, Tj = 125° C
11
16
A
S
Softness factor
IF = 60 A, dIF/dt = -200 A/s,
VR = 320 V, Tj = 125° C
0.4
tfr
Forward recovery time
IF = 60 A
dIF/dt = 100 A/s
VFR = 1.5 x VFmax, Tj = 25° C
600
ns
VFP
Forward recovery voltage
IF = 60 A, dIF/dt = 100 A/s,
Tj = 25° C
3.2
V
Figure 1.
Conduction losses versus
average current
Figure 2.
Forward voltage drop versus
forward current
0
20
40
60
80
100
0
10203040
50607080
P(W)
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
T
δ=tp/T
tp
IF(AV)(A)
0
20
40
60
80
100
120
140
160
180
200
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
I
FM(A)
T
J=150°C
(Maximum values)
T
J=150°C
(Maximum values)
T
J=150°C
(Typical values)
T
J=150°C
(Typical values)
T
J=25°C
(Maximum values)
T
J=25°C
(Maximum values)
VFM(V)
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (typical values)
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Z
th(j-c)/Rth(j-c)
Single pulse
ISOTOP
tp(s)
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
10
100
1000
I
RM(A)
I
F= 60A
V
R=320V
T
j=125 °C
T
j=25 °C
dIF/dt(A/s)
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