參數(shù)資料
型號(hào): STTH120R04TV1
廠商: STMICROELECTRONICS
元件分類(lèi): 整流器
英文描述: 60 A, 400 V, SILICON, RECTIFIER DIODE
封裝: ROHS COMPLIANT, PLASTIC, ISOTOP-4
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 117K
代理商: STTH120R04TV1
Characteristics
STTH120R04TV
2/7
1
Characteristics
When the diodes are used simultaneously:
ΔTj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.9 x IF(AV) + 0.005 x IF
2
(RMS)
Table 1.
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
400
V
VRSM
Non repetitive peak reverse voltage
400
V
IF(RMS)
RMS forward current
Per diode
140
A
IF(AV)
Average forward current,
δ = 0.5
Per diode
Tc = 75° C
60
A
Per package
Tc = 70° C
120
A
IFRM
Repetitive peak forward current
tp = 5 s, F = 1 kHz square
1800
A
IFSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
700
A
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Maximum operating junction temperature
150
°C
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
0.8
° C/W
Total
0.45
Rth(c)
Coupling thermal resistance
0.1
Table 3.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25° C
VR = VRRM
60
A
Tj = 125° C
60
600
VF
(2)
Forward voltage drop
Tj = 25° C
IF = 60 A
1.5
V
Tj = 100° C
1.05
1.3
Tj = 150° C
0.95
1.2
1.
Pulse test: tp = 5 ms, δ < 2 %
2.
Pulse test: tp = 380 s, δ < 2 %
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