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參數(shù)資料
| 型號： | STK14C88-3W55 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 32K x 8 AutoStore⑩ nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM |
| 中文描述： | 32K的× 8自動存儲⑩非易失QuantumTrap的CMOS非易失StaticRAM |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 371K |
| 代理商： | STK14C88-3W55 |
STK14C88-3
November 2003
10
Document Control # ML0015 rev 0.3
To operate in this mode the HSB pin should be con-
nected together to the HSB pins from the other
STK14C88-3s. An external pull-up resistor to + 3.3V
is required since HSB acts as an open drain pull
down. The V
CAP
pins from the other STK14C88-3
parts can be tied together and share a single capac-
itor. The capacitor size must be scaled by the num-
ber of devices connected to it. When any one of the
STK14C88-3s detects a power loss and asserts
HSB, the common HSB pin will cause all parts to
request a
STORE
cycle (a
STORE
will take place in
those STK14C88-3s that have been written since
the last nonvolatile cycle).
During any
STORE
operation, regardless of how it
was initiated, the STK14C88-3 will continue to drive
the HSB pin low, releasing it only when the
STORE
is
complete. Upon completion of the
STORE
operation
the STK14C88-3 will remain disabled until the HSB
pin returns high.
If HSB is not used, it should be left unconnected.
HARDWARE PROTECT
The STK14C88-3 offers hardware protection against
inadvertent
STORE
operation and
SRAM WRITE
s dur-
ing low-voltage conditions. When V
CAP
< V
SWITCH
, all
externally initiated
STORE
operations and
SRAM
WRITE
s will be inhibited.
LOW AVERAGE ACTIVE POWER
The STK14C88-3 draws significantly less current
when it is cycled at times longer than 55ns. Figure 3
shows the relationship between I
CC
and
READ
cycle
time. Worst-case current consumption is shown for
both
CMOS
and
TTL
input levels (commercial tem-
perature range, V
CC
= 3.6V, 100% duty cycle on chip
enable). Figure 4 shows the same relationship for
WRITE
cycles. If the chip enable duty cycle is less
than 100%, only standby current is drawn when the
chip is disabled. The overall average current drawn
by the STK14C88-3 depends on the following items:
1)
CMOS
vs.
TTL
input levels; 2) the duty cycle of
chip enable; 3) the overall cycle rate for accesses;
4) the ratio of
READ
s to
WRITE
s; 5) the operating
temperature; 6) the V
cc
level; and 7) I/O loading.
Figure 3: I
cc
(max) Reads
Figure 4: I
cc
(max) Writes
0
10
20
30
40
50
50
100
Cycle Time (ns)
150
200
TTL
CMOS
A
0
10
20
30
40
50
50
100
Cycle Time (ns)
150
200
TTL
CMOS
A
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PDF描述 |
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| STK14C88-3W55I | 32K x 8 AutoStore⑩ nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM |
| STK14C88-M | 32K x 8 AUTOSTORE nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM |
| STK14C88-3N35 | 32K x 8 AutoStore⑩ nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM |
| STK14C88-3N35I | 32K x 8 AutoStore⑩ nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM |
| STK14C88-3WF55 | 32K x 8 AutoStore⑩ nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STK14C88-3WF35 | 功能描述:NVRAM 32Kbx8 3.0-3.6V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK14C88-3WF35I | 功能描述:NVRAM 32Kbx8 3.0-3.6V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK14C88-3WF35ITR | 制造商:Cypress Semiconductor 功能描述:STK14C88-3WF35ITR - Tape and Reel |
| STK14C88-3WF35TR | 制造商:Cypress Semiconductor 功能描述:STK14C88-3WF35TR - Tape and Reel |
| STK14C88-3WF45 | 功能描述:NVRAM 32Kbx8 3.0-3.6V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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