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參數(shù)資料
| 型號： | STF20N20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET |
| 中文描述： | N溝道200伏- 0.10歐姆- 18A條TO-220/TO-220FP/DPAK低柵極電荷STripFET二MOSFET的 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 134K |
| 代理商： | STF20N20 |
4
2001 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
Applications Information
STF201-22 & STF201-30
Figure 1 - STF201 Circuit Diagram
Device Connection
The STF201 is designed to provide termination, EMI
filtering and ESD protection for two USB I/O lines. The
equivalent circuit diagram is shown in Figure 1. The
device is connected as follows:
USB data lines are routed through the STF201 for
easy implementation and optimum pc board layout.
Pin 1 is connected to the voltage supply line. The
input of the D+ line is routed into pin 2 and out of
pin 5. The input of the D- line is connected at pin 3
and the output at pin 4. Pin 6 is connected to
ground. The ground connection should be made
directly to the ground plane for best results. The
path length is kept as short as possible to reduce
the effects of parasitic inductance in the board
traces.
"
USB Port Design Considerations
The Universal Serial Bus (USB) specification requires
termination and filtering components for proper opera-
tion. In addition, an open USB socket is vulnerable to
hazardous ESD discharges in excess of 15kV. These
discharges can may occur on the data lines or the
voltage bus. The STF201 is an easily implemented
solution designed to meet the termination & EMI filter
requirements of the USB specification revision 1.1. It
also provides ESD protection to IEC 61000-4-2, level
4.
A simplified USB port is shown in Figure 3. USB line
termination is achieved with series resistors on both
the D+ and D- lines. These resistors preserve signal
integrity by matching the cable impedance to that of
the differential driver. 15k
pull-down resistors are
used to identify a downstream port while an upstream
port is identified with a 1.5K
pull up resistor on either
the D+ (full speed devices) or the D- (low speed de-
vices) data line. Capacitors are used to bypass high
frequency energy to ground and for edge rate control
of the USB signals. TVS diodes are added for ESD
protection of both (D+ & D-) data lines and the voltage
bus (V
). A power distribution switch and voltage
regulator provide the power management functions of
the port.
Semtech provides a complete solution to simplify USB
port design (Figure 4). The STF201 & STF202 inte-
Figure 2 - STF201 Connection Diagram
1
2
3
4
5
6
grate all of the components necessary for line termina-
tion, bidirectional EMI filtering, and ESD protection on
downstream (STF201) or upstream (STF202) ports.
The SC5826 is a dual port power switch that provides
individual or ganged port switching, fault reporting, and
inrush current limiting as required by the USB specifica-
tion. The SC5205 ULDO provides a stable voltage to
the USB controller.
Board Placement & layout Guidelines.
Board layout and placement of the STF201 play a
critical role in EMI & ESD suppression. Designing a
USB hub to meet EMI & ESD immunity requirements
requires a combination of optimum component place-
ment, trace routing, and good circuit design practices.
Some general guidelines are given below:
Avoid running D+ & D- signal line traces near high
speed clock lines or similar signal lines.
"
Avoid running critical signal lines near board edges.
"
Locate the USB controller chip physically near the
USB connectors.
"
Place the STF201 near the USB connector to
restrict transient coupling.
"
Minimize the path length between the USB connec-
tor and the STF201 as well as between the USB
controller and the STF201.
"
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參數(shù)描述 |
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| STF20N65M5 | 功能描述:MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STF20N90K5 | 功能描述:N-CHANNEL 900 V, 0.24 OHM TYP., 制造商:stmicroelectronics 系列:MDmesh? K5 包裝:管件 零件狀態(tài):在售 FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:900V 電流 - 連續(xù)漏極（Id）（25°C 時）:20A（Tc） 驅(qū)動電壓（最大 Rds On，最小 Rds On）:10V 不同 Id 時的 Vgs（th）（最大值）:5V @ 100μA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:40nC @ 10V Vgs（最大值）:±30V 不同 Vds 時的輸入電容（Ciss）（最大值）:1500pF @ 100V FET 功能:- 功率耗散（最大值）:40W（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:250 毫歐 @ 10A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:通孔 供應(yīng)商器件封裝:TO-220FP 封裝/外殼:TO-220-3 整包 標(biāo)準(zhǔn)包裝:50 |
| STF20N95K5 | 功能描述:MOSFET N-Ch 950V 0.275 Ohm 17.5A SuperMESH 5 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STF20NF06 | 功能描述:MOSFET N-Ch 60 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STF20NF06L | 功能描述:MOSFET N-Ch, 60V-0.06ohms 20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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