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參數(shù)資料
| 型號(hào)： | STD7NS20T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 7A條（?。﹟對(duì)252AA |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 163K |
| 代理商： | STD7NS20T4 |
3/10
STD7NB20 / STD7NB20-1
Thermal Impedance
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 100 V, I
D
= 5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
Min.
Typ.
Max.
Unit
Turn-on Delay Time
10
14
ns
t
r
Rise Time
15
20
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
V
DD
= 160V, I
D
= 10 A,
V
GS
= 10V
17
24
nC
Gate-Source Charge
7.5
nC
Gate-Drain Charge
5.5
nC
Parameter
Test Conditions
V
DD
= 160V, I
D
= 10 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
8
10
20
Max.
Unit
ns
ns
ns
Off-Voltage Rise Time
Fall Time
Cross-over Time
11
14
28
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
7
A
Source-drain Current (pulsed)
28
A
Forward On Voltage
I
SD
= 7 A, V
GS
= 0
I
SD
= 10 A, di/dt = 100A/
μ
s
V
DD
= 50V, T
j
= 150
°
C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
170
ns
Reverse Recovery Charge
980
nC
Reverse Recovery Current
11.5
A
Safe Operating Area
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