- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299944 > STB80NE03L-06 (意法半導(dǎo)體) N-Channel 30V-0.005Ω-80A- D2PAK STripFETTM Power MOSFET(N功率MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | STB80NE03L-06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 30V-0.005Ω-80A- D2PAK STripFETTM Power MOSFET(N功率MOSFET) |
| 中文描述： | N溝道30V的，0.005Ω- 80A條，采用D2PAK STripFETTM功率MOSFET（不適用功率MOSFET的） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | STB80NE03L-06 |
THERMAL DATA
Rthj-ca se
Rthj -am b
Rthc-si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by Tj max,
δ <1%)
80
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =15 V)
600
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID =250
AVGS =0
30
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
Tc =125
oC
1
10
A
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 15 V
± 100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate Threshold
Voltage
VDS =VGS
ID =250
A
11.7
2.5
V
RDS(on)
St atic Drain-source On
Resistance
VGS =10V
ID =40 A
VGS =5V
ID =40 A
0.005
0.006
0.008
ID(o n)
On St ate Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
80
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
)Forward
Transconduct ance
VDS >ID(on) xRDS(on) max
ID =40 A
30
50
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
VDS =25 V
f = 1 MHz
VGS = 0
6500
1500
500
8700
2000
700
pF
STB80NE03L-06
2/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STC9960 | 645 mm2, COPPER ALLOY, WIRE TERMINAL |
| STF-H240IID | T-1 SINGLE COLOR LED ARRAY, RED, 3 mm |
| STHDMI002ABTR | 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PQFP48 |
| STI324000C1-70SP | 4M X 32 MULTI DEVICE DRAM CARD, 70 ns, XMA88 |
| STI324000C1-80SH | 4M X 32 MULTI DEVICE DRAM CARD, 80 ns, XMA88 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB80NE03L-06_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET |
| STB80NE03L-06-1 | 制造商:STMicroelectronics 功能描述:TRANS MOSFET N-CH 30V 80A 3PIN I2PAK - Rail/Tube |
| STB80NE03L06T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 80A I(D) | TO-263AA |
| STB80NE03L-06T4 | 功能描述:MOSFET N-Ch 30 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB80NE06-10 | 功能描述:MOSFET RO 511-STB80NF06 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。