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參數(shù)資料
| 型號(hào)： | ST650C24L3L |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 1857 A, 2400 V, SCR, TO-200AC |
| 封裝： | ROHS COMPLIANT, METAL, BPUK-2 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 141K |
| 代理商： | ST650C24L3L |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93738
2
Revision: 13-Aug-08
ST650C..L Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version),
790 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at heatsink temperature
IT(AV)
180° conduction, half sine wave
Double side (single side) cooled
790 (324)
A
55 (85)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
1857
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
10 100
t = 8.3 ms
10 700
t = 10 ms
100 % VRRM
reapplied
8600
t = 8.3 ms
9150
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
510
kA2s
t = 8.3 ms
475
t = 10 ms
100 % VRRM
reapplied
370
t = 8.3 ms
347
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
5100
kA2
√s
Low level value of threshold voltage
VT(TO)1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
1.04
V
High level value of threshold voltage
VT(TO)2
(I >
π x I
T(AV)), TJ = TJ maximum
1.13
Low level value of on-state slope resistance
rt1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.61
m
Ω
High level value of on-state
slope resistance
rt2
(I >
π x I
T(AV)), TJ = TJ maximum
0.35
Maximum on-state voltage
VTM
Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse
2.07
V
Maximum holding current
IH
TJ = 25 °C, anode supply 12 V resistive load
600
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
Gate drive 20 V, 20
Ω, t
r ≤ 1 s
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
1000
A/s
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/s
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
s
Maximum turn-off time
tq
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/s
VR = 50, dV/dt = 20 V/s, Gate 0 V 100 Ω, tp = 500 s
200
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/s
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
80
mA
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