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參數(shù)資料
| 型號(hào)： | ST1000C16K0LPBF |
| 元件分類： | 晶閘管 |
| 英文描述： | 6540 A, 1600 V, SCR |
| 封裝： | KPUK-2 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 94K |
| 代理商： | ST1000C16K0LPBF |
ST1000C..K Series
3
Bulletin I25202 rev. A 01/00
www.irf.com
dv/dt
Maximum critical rate of rise of off-state
500
V/s
T
J
= T
J
max., linear to 80% rated V
DRM
voltage
I
RRM
Maximum peak reverse and off-state
100
s
T
J = TJ max., rated VDRM/VRRM applied
I
DRM
leakage current
Parameter
ST1000C..K
Units Conditions
Blocking
di/dt
Maximum non repetitive rate of rise
1000
A/s
Gate drive 20V, 20
, t
r
< 1s
of turned-on current
T
J = TJ max., anode voltage < 80% V DRM
t
d
Typical delay time
1.9
s
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
, T
J
= 25°C
t
q
Typical turn-off time
300
A/s
I
TM
= 550A, T
J
= T
J
max, di/dt = 40A/s, V
R
= 50V
dv/dt = 20V/s, Gate 0V 100
, tp < 500s
Parameter
ST1000C..K
Units Conditions
Switching
Parameter
ST1000C..K
Units Conditions
Triggering
P
GM
Maximum peak gate power
16
W
T
J
= T
J
max., tp < 5ms
P
G(AV)
Maximum peak average gate power
3
W
T
J
= T
J
max., f = 50Hz, d% = 50
I
GM
Maximum peak positive gate current
3.0
A
T
J = TJ max., tp < 5ms
+ V
GM
Maximum peak positive gate voltage
20
V
- V
GM
Maximum peak negative gate voltage
5.0
V
I
GT
DC gate current required to trigger
TYP.
MAX.
200
-
T
J =
-40°C
100
200
mA
T
J =25°C
50
-
T
J
= 125°C
V
GT
DC gate voltage required to trigger
1.4
-
T
J =
-40°C
1.1
3.0
V
T
J
=25°C
0.9
-
T
J = 125°C
I
GD
DC gate current not to trigger
10
mA
T
J
= T
J
max.
V
GD
DC gate voltage not to trigger
0.25
V
Max. required gate trigger / current /
voltage are the lowest value which
will trigger all units 12V anode-to-
cathode applied
Max. gate current / voltage not to
trigger is the max. value which will
not trigger any units with rated V
DRM
anode-to-cathode applied
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ST1000C16K0PBF | 6540 A, 1600 V, SCR |
| ST110S04P0LPBF | 175 A, 400 V, SCR, TO-209AC |
| ST110S04P0PBF | 175 A, 400 V, SCR, TO-209AC |
| ST110S04P0VLPBF | 175 A, 400 V, SCR, TO-209AC |
| ST110S04P0VPBF | 175 A, 400 V, SCR, TO-209AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST1000C16K1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1473 A |
| ST1000C16K1L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1473 A |
| ST1000C16K2 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1473 A |
| ST1000C16K2L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST1000C16K3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1473 A |
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