參數(shù)資料
型號(hào): ST1000C16K0LPBF
元件分類(lèi): 晶閘管
英文描述: 6540 A, 1600 V, SCR
封裝: KPUK-2
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 94K
代理商: ST1000C16K0LPBF
ST1000C..K Series
2
Bulletin I25202 rev. A 01/00
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J = 125°C
VV
mA
12
1200
1300
16
1600
1700
20
2000
2100
22
2200
2300
24
2400
2500
26
2600
2700
ST1000C..K
100
I
T(AV)
Maximum average on-state current
1473 (630)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (85)
°C
Double side (single side) cooled
I
T(RMS)
Maximum RMS on-state current
6540
A
DC @ 25°C heatsink temp. double side cooled
I
TSM
Maximum peak, one-cycle,
20.0
KA
t = 10ms
No voltage
non-repetitive surge current
21.2
t = 8.3ms
reapplied
17.0
t = 10ms
100% V
RRM
18.1
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
2000
KA2s
t = 10ms
No voltage
Initial T
J
= T
J
max.
1865
t = 8.3ms
reapplied
1445
t = 10ms
100% V
RRM
1360
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
20000
KA2
√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
0.950
V
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
VT(TO)2 High level value of threshold voltage
1.024
(I >
π x I
T(AV)), T J = TJ max.
rt1
Low level value of on-state slope resistance
0.283
m
(16.7% x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ max.
rt2
High level value of on-state slope resistance
0.265
(I >
π x I
T(AV)), T J = TJ max.
V
TM
Maximum on-state voltage drop
1.80
V
I
pk
= 3000A, T
J
= 125°C, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
mA
T
J = 25°C, anode supply 12V resistive load
I
L
Typical latching current
1000
Parameter
ST1000C..K
Units Conditions
On-state Conduction
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