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參數(shù)資料
| 型號(hào)： | SSM6K18TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Current Switching Applications |
| 中文描述： | 高電流開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 212K |
| 代理商： | SSM6K18TU |
SSM6K18TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS
Ⅲ
)
SSM6K18TU
High Current Switching Applications
Suitable for high-density mounting due to compact package
Low on resistance:
R
on
= 54 m
(max) (@V
GS
= 2.5 V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
±
12
V
DC
I
D
4
Drain current
Pulse
I
DP
8
A
Drain power dissipation
P
D
(Note 1)
500
mW
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Marking Equivalent Circuit (Top View)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and
other objects that are made of anti-static materials.
Unit: mm
1,2,5,6 : Drain
3
4
: Gate
: Source
JEDEC
JEITA
TOSHIBA
Weight: 7 mg (typ.)
6
KNA
4
1
2
3
5
4
1
2
3
6
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSM6K201FE | Power Management Switch Applications High Speed Switching Applications |
| SSM6K202FE | High-Speed Switching Applications |
| SSM6K203FE | High-Speed Switching Applications |
| SSM6K204FE | High-Speed Switching Applications |
| SSM6K209FE | High-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSM6K18TU(TE85L,F) | 功能描述:MOSFET Vds=20V Id=4A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K18TU(TE85LF) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 4A 20V SSOTFMLP |
| SSM6K201FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications High Speed Switching Applications |
| SSM6K202FE | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K202FE(TE85L,F | 功能描述:MOSFET Vds=30V Id=2.3A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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