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參數(shù)資料
| 型號(hào)： | SSM3K7002FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | SSM3K7002FU |
SSM3K7002FU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K7002FU
High Speed Switching Applications
Analog Switch Applications
Small package
Low ON resistance
: R
on
=
3.3
Ω
(max) (@V
GS
=
4.5 V)
: R
on
=
3.2
Ω
(max) (@V
GS
=
5 V)
: R
on
=
3.0
Ω
(max) (@V
GS
=
10 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
60
V
Gate-Source voltage
±
20
V
DC
200
Drain current
Pulse
800
mA
Drain power dissipation (Ta
=
25°C)
150
mW
Channel temperature
150
°C
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.6mm
2
×
3)
55~150
°C
Marking
Equivalent Circuit
(top view)
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1
2
3
1.25 ± 0.1
0
1
0
0
2.1± 0.1
2
0
0
0
0
+
+
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1E
0.6 mm
1.0 mm
NC
1
2
3
1
2
USM
1. GATE
2. SOURCE
3. DRAIN
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