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參數(shù)資料
| 型號： | SSM3K310T |
| 廠商： | Toshiba Corporation |
| 英文描述： | High-Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 169K |
| 代理商： | SSM3K310T |
SSM3K7002F
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM3K7002F
High-Speed Switching Applications
Analog Switch Applications
Small package
Low ON-resistance
Absolute Maximum Ratings
(Ta = 25°C)
: R
on
=
3.3
Ω
(max) (@V
GS
=
4.5 V)
: R
on
=
3.2
Ω
(max) (@V
GS
=
5 V)
: R
on
=
3.0
Ω
(max) (@V
GS
=
10 V)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
60
V
Gate-source voltage
V
GSS
±
20
V
DC
I
D
200
Drain current
Pulse
I
DP
800
mA
Drain power dissipation (Ta
=
25°C)
P
D
200
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
20 V, V
DS
=
0
±
10
μ
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
0.1 mA, V
GS
=
0
60
V
Drain cutoff current
I
DSS
V
DS
=
60 V, V
GS
=
0
1
μ
A
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
0.25 mA
1.0
2.5
V
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
=
200 mA
170
mS
I
D
=
500 mA, V
GS
=
10 V
2.0
3.0
I
D
=
100 mA, V
GS
=
5 V
2.1
3.2
Drain-source ON-resistance
R
DS (ON)
I
D
=
100 mA, V
GS
=
4.5 V
2.2
3.3
Ω
Input capacitance
C
iss
17
pF
Reverse transfer capacitance
C
rss
1.4
pF
Output capacitance
C
oss
V
DS
=
25 V, V
GS
=
0, f
=
1 MHz
5.8
pF
Turn-on delay time
td
(on)
2.4
4.0
Switching time
Turn-off delay time
td
(off)
V
DD
=
30 V , I
D
=
200 mA ,
V
GS
=
0 to 10 V
26
40
ns
Unit: mm
S-MINI
1
2
1
+
0
1
2
3
0
0
+
0
+
0
0
1.5+0.25
2.5+0.5
1.Gate
2.Source
3.Drain
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
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