參數(shù)資料
型號: SSM3J16FV
廠商: Toshiba Corporation
英文描述: Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications
中文描述: 場效應晶體管硅P通道馬鞍山型高速開關應用模擬開關應用
文件頁數(shù): 4/5頁
文件大?。?/td> 181K
代理商: SSM3J16FV
SSM3J16FV
2007-11-01
4
Y
fs
– I
D
I
DR
– V
DS
Drain current ID (mA)
Drain - Source VDS (V)
Drain - Source voltage VDS (V)
Drain current I
D
(mA)
D
F
Y
f
(
S
C
10
-0.1
100
300
10000
1000
-100
-1
-10
30
50
500
3000
5000
Common Source
VDD
=
-3 V
VGS
=
0~-2.5 V
Ta
=
25°C
tr
ton
tf
toff
-0.1
10
200
100
-100
-1
-10
Common Source
VGS
=
0 V
f
=
1 MHz
Ta
=
25°C
Crss
Coss
Ciss
1
-1
10
30
1000
100
-1000
-10
-100
3
5
50
300
500
Common Source
VDS
=
3 V
Ta
=
25°C
0
0
-100
-250
1.4
0.4
-50
-150
-200
0.2
0.6
0.8
1
1.2
Common Source
VGS
=
0 V
Ta
=
25°C
G
D
S
IDR
c – V
DS
t – I
D
1
0
0
100
250
160
40
50
150
200
20
60
80
100
140
120
P
D
– Ta
周囲溫度
Ta (°C)
P
Mounted on FR4 board
(25.4mmX25.4mmX1.6t
CU Pad:0.6mm2X3
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