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參數(shù)資料
| 型號(hào)： | SSM3J16FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
| 中文描述： | 場(chǎng)效應(yīng)晶體管硅P通道馬鞍山型高速開關(guān)應(yīng)用模擬開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 223K |
| 代理商： | SSM3J16FU |
SSM3J16FU
2007-11-01
2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
MIN.
TYP.
MAX.
UNIT
Gate leakage current
I
GSS
V
GS
=
±
10 V, V
DS
=
0
±
1
μ
A
Drain-Source breakdown voltage
V
(BR) DSS
I
D
=
0.1 mA, V
GS
=
0
20
V
Drain cut-off current
I
DSS
V
DS
=
20 V, V
GS
=
0
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
0.1 mA
0.6
1.1
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
10 mA
25
mS
I
D
=
10 mA, V
GS
=
4 V
6
8
I
D
=
10 mA, V
GS
=
2.5 V
8
12
Drain-Source ON resistance
R
DS (ON)
I
D
=
1 mA, V
GS
=
1.5 V
18
45
Ω
Input capacitance
C
iss
11
pF
Reverse transfer capacitance
C
rss
3.7
pF
Output capacitance
C
oss
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
10
pF
Turn-on time
t
on
130
Switching time
Turn-off time
t
off
V
DD
=
3 V, I
D
=
10 mA,
V
GS
=
0 ~
2.5 V
190
ns
Switching Time Test Circuit
Precaution
V
th
can be expressed as the voltage between the gate and source when the low operating current value is I
D
=
100
μ
A for this product. For normal switching operation, V
GS (on)
requires a higher voltage than V
th
and V
GS (off)
requires a lower voltage than V
th
. (The relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on).
)
Be sure to take this into consideration when using the device.
V
DD
=
3 V
Duty
<
1%
V
IN
: t
r
, t
f
<
5 ns
(Z
out
=
50
Ω
)
Common Source
Ta
=
25°C
IN
0
2.5V
10
μ
s
V
DD
OUT
5
Ω
R
L
(c) V
OUT
t
on
90%
10%
2.5 V
0 V
90%
10%
t
off
t
r
t
f
V
DS (ON)
V
DD
(b) V
IN
(a) Test circuit
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