參數(shù)資料
型號(hào)： SPW47N60S5
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS™ Power Transistor
文件頁數(shù)： 7/11頁
文件大?。?/td> 121K
代理商： SPW47N60S5
2002-10-07
Page 7
SPW47N60C2
Final data
9 Forward characteristics of body diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 10 μs
2
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-1
10
0
10
1
10
A
SPW47N60C2
I
F
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
10 Typ. switching time
t
=
f
(
R
G
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=47 A
0
2
4
6
8
10
12
14
16
20
R
G
0
10
1
10
2
10
3
10
ns
t
t
d(on)
t
d(off)
t
r
t
f
11 Typ. switching losses
1)
E
=
f
(
I
D
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
R
G
=1.8
0
10
20
30
40
50
60
70
80
A
I
D
100
0
0.5
1
1.5
2
2.5
3
3.5
4
mWs
5
E
E
on
*
E
off
*)
E
on
includes SDP06S60 diode
commutation losses.
1
This chart helps to estimate
the switching power losses.
The values can be different
under other operating conditions.
12 Typ. switching losses
1)
E
=
f
(
R
G
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=47 A
0
2
4
6
8
10
12
14
16
20
R
G
0
0.5
1
1.5
2
mWs
3
E
*)
E
on
includes SDP06S60 diode
commutation losses.
1
This chart helps to estimate
the switching power losses.
The values can be different
under other operating conditions.
E
on
*
E
off
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