參數(shù)資料
型號(hào)： SPW12N50C3
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS™ Power Transistor
文件頁數(shù)： 2/11頁
文件大?。?/td> 255K
代理商： SPW12N50C3
2003-06-30
Page 2
SPW12N50C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 400 V,
I
D
= 11.6 A,
T
j
= 125 °C
d
v
/d
t
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
-
typ.
-
max.
1
Thermal resistance, junction - case
R
thJC
R
thJA
R
thJA
K/W
Thermal resistance, junction - ambient, leaded
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
°C
Electrical Characteristics,
at
T
j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
500
typ.
-
max.
-
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
V
(BR)DS
V
Drain-Source avalanche
breakdown voltage
V
GS
=0V,
I
D
=11.6A
-
600
-
Gate threshold voltage
V
GS(th)
I
DSS
I
D
=500
μΑ
,
V
GS
=
V
DS
2.1
3
3.9
Zero gate voltage drain current
V
DS
=500V,
V
GS
=0V,
T
j
=25°C,
T
j
=150°C
-
-
0.1
-
1
100
μA
Gate-source leakage current
I
GSS
V
GS
=20V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V,
I
D
=7A,
T
j
=25°C
T
j
=150°C
-
-
0.34
0.92
0.38
-
Gate input resistance
R
G
f
=1MHz, open Drain
-
1.4
-
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SPW-1301 制造商:Prem Transformers 功能描述:
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