參數(shù)資料
型號: SPU30N03S2L-10
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS Power-Transistor
中文描述: 的OptiMOS功率晶體管
文件頁數(shù): 2/8頁
文件大小: 257K
代理商: SPU30N03S2L-10
2003-04-30
Page 2
SPU30N03S2-08
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
R
thJA
-
-
1.2
K/W
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
-
-
100
@ min. footprint
@ 6 cm
2
cooling area
3)
-
-
-
-
75
50
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=85μA
Zero gate voltage drain current
V
(BR)DSS
30
-
-
V
V
GS(th)
2.1
3
4
V
DS
=30V,
V
GS
=0V,
T
j
=25°C
V
DS
=30V,
V
GS
=0V,
T
j
=125°C
I
DSS
-
-
0.01
1
1
100
μA
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
1
100
nA
V
GS
=10V,
I
D
=30A
R
DS(on)
-
6.3
8.2
m
1Current limited by bondwire; with an
R
thJC
= 1.2 K/W the chip is able to carry
I
D
= 100A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
.
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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