參數(shù)資料
型號(hào): SPU28N03
廠商: INFINEON TECHNOLOGIES AG
英文描述: SIPMOS Power Transistor
中文描述: SIPMOS功率晶體管
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 142K
代理商: SPU28N03
SPD 28N03
Data Sheet
4
06.99
Electrical Characteristics
, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Gate to source charge
V
DD
= 24 V,
I
D
= 28 A
Gate to drain charge
V
DD
= 24 V,
I
D
= 28 A
Gate charge total
V
DD
= 24 V,
I
D
= 28 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 24 V,
I
D
= 28 A
6
nC
4
Q
gs
-
-
13.6
Q
gd
20
-
25
38
Q
g
V
(plateau)
5.6
-
V
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
Inverse diode direct current,pulsed
T
C
= 25 C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 56 A
Reverse recovery time
V
R
= 15 V,
I
F
=
I
S
, d
i
F
/d
t
= 100 A/μs
Reverse recovery charge
V
R
= 15 V,
I
F=
l
S
, d
i
F
/d
t
= 100 A/μs
I
S
-
-
28
A
I
SM
-
-
112
V
SD
-
1.1
V
1.7
t
rr
-
38
ns
57
Q
rr
-
μC
0.032
0.048
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