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參數(shù)資料
| 型號： | SPU04N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 143K |
| 代理商： | SPU04N60S5 |
2002-10-07
Page 1
SPD04N60C2
SPU04N60C2
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Improved noise immunity
Product Summary
V
DS
R
DS(on)
I
D
600
0.95
4.5
V
A
P-TO251
P-TO252
Type
SPD04N60C2
SPU04N60C2
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4307
Q67040-S4306
Marking
04N60C2
04N60C2
Maximum Ratings, at
T
C
= 25°C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Value
4.5
2.8
Unit
A
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D puls
E
AS
9
I
D
=3.6A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax1)
I
D
=4.5A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode d
v
/d
t
130
mJ
E
AR
0.4
I
AR
d
v
/d
t
4.5
6
A
I
S
=4.5A,
V
DS
<
V
DD
, d
i
/d
t
=100A/μs,
T
jmax
=150°C
Gate source voltage
Power dissipation,
T
C
= 25°C
Operating and storage temperature
V/ns
V
GS
P
tot
T
j ,
T
stg
±20
50
V
W
°C
-55... +150
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