參數資料
型號: SPP80N10L
廠商: INFINEON TECHNOLOGIES AG
英文描述: SIPMOS Power-Transistor
中文描述: SIPMOS功率晶體管
文件頁數: 1/8頁
文件大小: 108K
代理商: SPP80N10L
2002-08-14
Page 1
Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
SIPMOS
Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
Product Summary
V
DS
R
DS(on)
I
D
100
14
80
V
m
A
P-TO263-3-2
P-TO220-3-1
P-TO262-3-1
Marking
80N10L
80N10L
80N10L
Type
SPP80N10L
Package
P-TO220-3-1
Ordering Code
Q67042-S4173
SPB80N10L
SPI80N10L
P-TO263-3-2
P-TO262-3-1
Q67042-S4171
Q67042-S4172
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Value
80
58
Unit
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
T
C
=25°C
Avalanche energy, single pulse
I
D puls
320
I
D
=80 A ,
V
DD
=25V,
R
GS
=25
Avalanche energy, periodic limited by
T
jmax
Reverse diode d
v
/d
t
E
AS
700
mJ
E
AR
d
v
/d
t
25
6
I
S
=80A,
V
DS
=0V,
d
i
/d
t
=200A/μs
Gate source voltage
Power dissipation
kV/μs
V
GS
P
tot
±20
250
V
W
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
-55... +175
55/175/56
°C
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