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參數(shù)資料
| 型號： | SPP12N50C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 365K |
| 代理商： | SPP12N50C3 |
2004-03-29
Rev. 2.1
Page 1
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
V
DS
@
T
jmax
R
DS(on)
I
D
560
0.38
V
A
11.6
P-TO262
P-TO220-3-1
P-TO220-3-31
P-TO263-3-2
2
P-TO220-3-1
23
1
P-TO220-3-31
1
2
3
Marking
12N50C3
12N50C3
12N50C3
12N50C3
Type
SPP12N50C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4579
SPB12N50C3
P-TO263-3-2
Q67040-S4641
SPI12N50C3
P-TO262
Q67040-S4578
SPA12N50C3
P-TO220-3-31 Q67040-S4577
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP_B_I
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
11.6
7
11.6
1)
7
1)
A
I
D puls
E
AS
34.8
34.8
A
I
D
=5.5A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=11.6A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
340
340
mJ
E
AR
0.6
0.6
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
11.6
11.6
A
±20
±
30
125
±20
±
30
33
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
-55...+150
°C
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| SPP12N50C3_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated |
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