| 型號: | SPP11N60S5 |
| 廠商: | INFINEON TECHNOLOGIES AG |
| 英文描述: | Cool MOS⑩ Power Transistor |
| 中文描述: | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù): | 1/14頁 |
| 文件大小: | 193K |
| 代理商: | SPP11N60S5 |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SPB11N60S5 | Cool MOS⑩ Power Transistor |
| SPB11N60S5 | OptiMOS Power-Transistor( MOS 型功率晶體管) |
| spp11n60 | OptiMOS Power-Transistor( MOS 型功率晶體管) |
| SPB12N50C3 | Cool MOS⑩ Power Transistor |
| SPI12N50C3 | Cool MOS⑩ Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPP11N60S5_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor Feature New revolutionary high voltage technology |
| SPP11N60S5HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 11A TO-220AB |
| SPP11N60S5XKSA1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPP11N65C3 | 功能描述:MOSFET COOL MOS N-CH 650V 11A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPP11N65C3_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated |