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參數(shù)資料
| 型號： | SPP100N08S2L-07 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 309K |
| 代理商： | SPP100N08S2L-07 |
2003-05-09
Page 1
SPP100N08S2-07
SPB100N08S2-07
Opti
MOS
Power-Transistor
Product Summary
V
DS
R
DS(on)
max. SMD version
I
D
75
V
m
A
6.8
100
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P- TO263 -3-2
P- TO220 -3-1
Marking
PN0807
PN0807
Type
SPP100N08S2-07
Package
P- TO220 -3-1
Ordering Code
Q67060-S6044
SPB100N08S2-07
P- TO263 -3-2
Q67060-S6046
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
Value
Unit
A
T
C
=25°C
I
D
100
100
Pulsed drain current
T
C
=25°C
Avalanche energy, single pulse
I
D puls
400
I
D
=80 ,
V
DD
=25V,
R
GS
=25
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode d
v
/d
t
E
AS
810
mJ
E
AR
d
v
/d
t
30
6
I
S
=100A,
V
DS
=60V,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
kV/μs
V
GS
P
tot
±20
300
V
Power dissipation
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
W
T
j ,
T
stg
-55... +175
55/175/56
°C
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