參數(shù)資料
型號: SPP100N03S2-03
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS Power-Transistor
中文描述: 的OptiMOS功率晶體管
文件頁數(shù): 1/8頁
文件大?。?/td> 417K
代理商: SPP100N03S2-03
2003-05-09
Page 1
SPI100N03S2L-03
SPP100N03S2L-03,SPB100N03S2L-03
Opti
MOS
Power-Transistor
Product Summary
V
DS
R
DS(on)
max. SMD version
I
D
30
V
m
A
2.7
100
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P- TO263 -3-2
P- TO262 -3-1
P- TO220 -3-1
Marking
PN03L03
PN03L03
PN03L03
Type
SPP100N03S2L-03 P- TO220 -3-1
Package
Ordering Code
Q67042-S4056
SPB100N03S2L-03 P- TO263 -3-2
SPI100N03S2L-03
Q67042-S4055
Q67042-S4094
P- TO262 -3-1
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Value
100
100
Unit
A
T
C
=25°C
Pulsed drain current
T
C
=25°C
Avalanche energy, single pulse
I
D puls
400
I
D
=80 ,
V
DD
=25V,
R
GS
=25
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode d
v
/d
t
E
AS
810
mJ
E
AR
d
v
/d
t
30
I
S
=100A,
V
DS
=24V,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
Power dissipation
6
kV/μs
V
GS
P
tot
±20
300
V
W
T
C
=25°C
Operating and storage temperature
T
j ,
T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
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