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參數(shù)資料
| 型號(hào)： | SPP07N60S5 |
| 廠商： | SIEMENS AG |
| 英文描述： | Cool MOS Power-Transistor(Cool MOS 功率晶體管) |
| 中文描述： | 酷MOS功率晶體管（酷馬鞍山功率晶體管） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | SPP07N60S5 |
1
2000-01-31
SPP07N60S5
SPB07N60S5
Cool MOS
Power-Transistor
·
New revolutionary high voltage technology
·
Ultra low gate charge
·
Periodic avalanche rated
·
Extreme dvdt rated
·
Optimized capacitances
·
Improved noise immunity
·
Former development designation:
SPPx3N60S5/SPBx3N60S5
G,1
D,2
S,3
C
O L
MOS
Type
SPP07N60S5
SPB07N60S5
V
DS
600 V
I
D
7.3 A
R
DS(on)
0.6
W
Package
P-TO220-3-1
P-TO263-3-2
Marking
07N60S5
07N60S5
Ordering Code
Q67040-S4172
Q67040-S4185
Maximum Ratings
, at T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
= 1ms
1)
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 7.3 A,
V
DD
= 50 V
Avalanche energy (repetitive, limited by
T
jmax
)
I
D
= 9.1 A ,
V
DD
= 50 V
Avalanche current (repetitive, limited by
T
jmax
)
Reverse diode dvdt
I
S
= 7.3 A,
V
DS
<
V
DSS
,
didt
= 100 A/μs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating and storage temperature
Symbol
I
D
Value
7.3
4.6
Unit
A
I
D puls
14.6
E
AS
230
mJ
E
AR
0.8
I
AR
dvdt
9.1
6
A
kV/μs
V
GS
P
tot
±
20
83
V
W
T
j ,
T
stg
-55... +150
°C
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|---|---|
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| SPP07N60S5_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor Feature New revolutionary high voltage technology |
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| SPP07N60S5XK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220 |
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