參數(shù)資料
型號: SPI11N60S5
廠商: SIEMENS AG
英文描述: Cool MOS Power-Transistor( MOS 型功率晶體管)
中文描述: 酷MOS功率晶體管(馬鞍山型功率晶體管)
文件頁數(shù): 2/9頁
文件大?。?/td> 94K
代理商: SPI11N60S5
2
2000-01-27
SPI11N60S5
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
(Leaded and through-hole packages)
R
thJC
R
thJA
-
-
-
-
1
62
K/W
Static Characteristics
, at T
j
= 25 °C, unless otherwise specified
Drain-source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 0.5 mA,
T
j
= 25 °C
Zero gate voltage drain current,
V
DS
=
V
DSS
V
GS
= 0 V,
T
j
= 25 °C
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-source on-state resistance
V
GS
= 10 V,
I
D
= 7 A
V
(BR)DSS
600
-
-
V
V
GS(th)
3.5
4.5
5.5
I
DSS
-
-
-
-
25
250
μA
I
GSS
-
-
100
nA
R
DS(on)
-
0.34
0.38
W
1current limited by Tjmax
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